Mitsubishi Electric to Release Power Semiconductor Module Using 6 IGBTs

May 15, 2013
Mami Akasaka, Tech-On!
The "J1 Series" under development (photo courtesy of Mitsubishi Electric)
The "J1 Series" under development (photo courtesy of Mitsubishi Electric)
[ If it clicks, the expanded picture will open ]
The bottom side of the J1 Series (photo courtesy of Mitsubishi Electric)
The bottom side of the J1 Series (photo courtesy of Mitsubishi Electric)
[ If it clicks, the expanded picture will open ]

Mitsubishi Electric Corp will release the "J1 Series," a power semiconductor module equipped with six IGBT elements for driving the inverters of the motors of electric and hybrid electric vehicles.

By attaching six IGBT elements to one module, Mitsubishi Electric realized a footprint of 117.0 x 113.0mm, which is about 20% smaller than that of three units of the "CT600DJH060," the company's power semiconductor module equipped with two IGBT elements.

The IGBT element employed for the J1 is the "CSTBT (carrier stored trench-gate bipolar transistor)," the sixth-generation product with a structure using carrier storage effect. With this IGBT device, the collector-emitter saturation voltage was reduced by about 15%, compared with that of the CT600DJH060. Moreover, with a direct water cooling structure integrated with a cooling fin, the heat radiation was improved by 40%, compared with that of the CT600DJH060.

Mitsubishi Electric will start to ship samples of the "CT600CJ1A060" (650V, 600A) and the "CT400CJ1A090" (900V, 400A) Sept 30, 2013, for a price of about ¥65,000 (approx US$635) per unit. The company will exhibit them at PCIM Europe 2013, which runs from May 14 to 16, 2013, in Nuremberg, Germany.