Samsung Rolls Out 4Gb LPDDR3 Mobile DRAM

May 3, 2013
Jyunichi Oshita, Nikkei BP Semiconductor Research
The 4-Gbit mobile DRAM chip developed by Samsung
The 4-Gbit mobile DRAM chip developed by Samsung
[Click to enlarge image]

Samsung Electronics Co Ltd started volume production of a 4-Gbit mobile DRAM chip compatible with LPDDR3 (low power double data rate 3).

The DRAM is manufactured using 2Xnm process technology and targeted at high-end models of smartphones and tablet computers and other mobile devices that deal with heavy multimedia processing.

The maximum data transmission speed of LPDDR3 is 2.133Gbps per pin, which is more than twice as high as that of LPDDR2 (800Mbps). As a result, it becomes possible to transmit three full-HD movies (about 17 Gbytes) within one second with a mobile device.

The employment of the 2Xnm process technology increased operation speed by 30% and reduced power consumption by 20%, compared with the previous product using 3Xnm process technology, Samsung said. And a 2-Gbyte package with a thickness of 0.8mm can be realized by stacking four chips.

Samsung plans to increase the ratio of its mobile DRAM chips that are manufactured using 2Xnm process technology in the latter half of 2013.