Samsung Commences Production of 512Mb Phase Change Memory

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Sept 23, 2009 15:27 Nikkei Electronics Asia

Samsung Electronics Co Ltd announced at the sixth annual Samsung Mobile Solutions Forum that it has begun producing 512Mb PRAM (phase change random access memory). PRAM is non-volatile memory technology which features high-performance and low power consumption, and is targeted at mobile devices such as smartphones.

High-density and high-performance are the key technology requirements for smartphones, however these attributes can increase power consumption significantly. Because PRAM's greatly simplified data access logic requires less support from DRAM, its power usage is very efficient. By using PRAM, the battery life of a handset can be extended over 20%.

The 512Mb PRAM can erase 64KWs (kilowords) in 80ms, said to be over 10 times faster than NOR Flash memory. In data segments of 5MBs, PRAM can erase and rewrite data approximately seven times faster than NOR Flash.

NIKKEI ERECTRONICS ASIA

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