Sanyo Electric Co., Ltd. has announced its R&D results to boost cell conversion efficiency of its proprietary HIT Solar Cell (HIT stands for "heterojunction with intrinsic thin layer") from the existing 21.8 to 22.0%.
The cell boasts the top-class efficiency for a crystalline silicon-type solar cell.
The HIT Solar Cell is composed of an n-type single crystalline silicon layer surrounded by amorphous silicon layers formed on its both sides.
The conversion efficiency has been enhanced by improving: (1) the quality of interface between the single crystalline silicon layer and amorphous silicon layer and (2) reflection suppressive effect and optical confinement effect through the refinement of the shape and size of uneven composition formed on the surface.
The improvement (1) has increased the open circuit voltage (VOC) from 0.718 to 0.722 V while the improvement (2) has enhanced the short circuit current (ISC) from 38.37 to 38.64 mA/cm2.
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