Fujitsu's GaN Power Device Realizes 2.5kW Power Supply

Nov 9, 2012
Ikutaro Kojima, Tech-On!
A prototyped GaN device with the TO247 package (left) and a 6-inch wafer on which the device is formed (right) (photo courtesy of Fujitsu Semiconductor)
A prototyped GaN device with the TO247 package (left) and a 6-inch wafer on which the device is formed (right) (photo courtesy of Fujitsu Semiconductor)
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Fujitsu Semiconductor Ltd confirmed a 2.5kW high-output operation with a power supply unit equipped with the company's gallium nitride (GaN)-based power device using a silicon (Si) substrate.

Fujitsu Semiconductor plans to start volume production of the device in late 2013. For the future, the company intends to propose various power supply applications using the device, aiming at sales of about ¥10 billion (approx US$126 million) with its GaN power devices.

Fujitsu Semiconductor has been engaged in the development of volume production technologies since 2009 in the aim of commercializing GaN-based power devices using Si substrates, whose costs can be reduced by increasing their diameters. Also, it has been optimizing GaN-based power devices for use in power supply units since 2011 by providing them to specific partners dealing with power supply devices.

Furthermore, Fujitsu Semiconductor and Fujitsu Laboratories Ltd have been developing (1) process technologies for growing high-quality GaN crystal on Si substrates, (2) device technologies for preventing on-resistance from increasing at the time of switching by optimizing electrode designs and (3) technologies for designing the circuits of power supply units for high-speed switching of GaN.

As a result of those developments, Fujitsu Semiconductor achieved a conversion efficiency higher than those of existing Si-based devices with an evaluation power supply circuit using a GaN power device. Also, it prototyped a power supply unit for servers by adding a GaN power device to a power factor improvement circuit and confirmed a 2.5kW high-output operation.

Fujitsu Semiconductor has already completed a production line for 6-inch wafers in its Aizuwakamatsu Plant, Fukushima Prefecture, Japan, and will start volume production of GaN power devices in late 2013. For the future, the company plans to help the development of compact power supply units with low loss for various applications by providing GaN power devices optimized for applications and technically supporting circuit designing. It aims to achieve sales of about ¥10 billion with GaN power devices in fiscal 2015.

Fujitsu Semiconductor will exhibit the GaN power device at Embedded Technology 2012, which will take place from Nov 14 to 16, 2012, in Yokohama, Japan.