Elpida Develops 4Gb DDR3 SDRAM Using 25nm Process Technology
Elpida Memory Inc announced that it has developed a 4-Gbit DDR3 SDRAM using 25nm process technology.
Elpida claims that it is the world's first 4-Gbit DDR3 DRAM made by using 25nm process technology and that it has the world's smallest chip area. The company plans to start to ship samples of the SDRAM, "EDJ4104BCBG/EDJ4108BCBG," and begin volume production in December 2011.
Elpida has already commercialized a 2-Gbit DDR3 SDRAM using 25nm process technology and a 4-Gbit DDR3 SDRAM using 30nm process technology. This time, by using 25nm process technology, the number of chips obtained from each wafer increased by about 45%, compared with the 4-Gbit DDR3 SDRAM using 30nm process technology. At the same time, the company reduced operating current by 25-30% and standby current by 30-50%.
The data transmission speed of the new SDRAM is 1,866Mbps per pin or higher. Its data width is x4 bits or x8 bits. And its power supply voltage is 1.5V and 1.35V. Elpida expects that the new product will be employed for various types of servers, personal computers, "ultrabooks," tablet computers, etc.