Toshiba Begins Operations of New NAND Flash Fab
Toshiba Corp completed the construction of the "Fab5," a new manufacturing wing for NAND flash memories, at its Yokkaichi plant (Yokkaichi City, Mie Prefecture, Japan) and started its operations.
The company considers the Yokkaichi plant as the core plant for the production of most-advanced NAND flash memories made by using 24nm- and more advanced process technologies as well as 3D NAND flash memories, which the company defines as "post-NAND flash memory."
Toshiba started volume production of 24nm-generation products in July 2011 and will start to ship products in August 2011. The investment in manufacturing facilities is made in cooperation with SanDisk Corp, Toshiba's partner in the field of NAND flash memory. The investment ratios of Toshiba and SanDisk are 50.1% and 49.9%, respectively.
The Fab5 has the third manufacturing line that can deal with 300mm wafers in the Yokkaichi plant after the Fab3's and Fab4's lines. Its construction began in July 2010.
This time, Toshiba started operations of the "first-term" clean room, which occupies half of the Fab5. And the company brought manufacturing facilities to half of the room and started volume production.
For the future, Toshiba plans to make additional investments depending on market trends and expand the capacity of the Fab5. The company intends to start the construction of the "second-term" clean room in fiscal 2013 and its operations at the end of fiscal 2013 or in fiscal 2014.
Toshiba and SanDisk celebrated the completion of the Fab5, July 12, 2011, at the Yokkaichi plant. And Toshiba President Norio Sasaki said, "The semiconductor business is the main engine of our growth. And we have invested most in it," stressing the importance of the NAND flash memory business for the company.
"We want to make the Fab5 the world's strongest manufacturing base for memories," he said. "I think we can yell for the recovery from the earthquakes by making investments in most-advanced technologies at the Fab5."
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