[Ceatec] Thermoelectric Conversion Element Made With Oxide

Oct 6, 2010
Tetsuo Nozawa, Nikkei Electronics
The thermoelectric conversion element made by using an oxide-based semiconductor material. It is very thin and measures approximately 7 x 7mm.
The thermoelectric conversion element made by using an oxide-based semiconductor material. It is very thin and measures approximately 7 x 7mm.
[Click to enlarge image]
A larger thermoelectric conversion element (3 x 3cm)
A larger thermoelectric conversion element (3 x 3cm)
[Click to enlarge image]

Fujitsu Laboratories Ltd developed a thermoelectric conversion element by using an oxide-based semiconductor material and exhibited it at Ceatec Japan 2010.

Fujitsu Laboratories prototyped the element in various sizes, but the smallest one is very thin and measures approximately 7 x 7mm. The element is targeted at so called "energy harvesting." And the company expects that it will be used to generate electricity from body heat and supply it to a sensor, etc.

Fujitsu Laboratories designed and made the thermoelectric conversion element by using an oxide material obtained from Japan's National Institute of Advanced Industrial Science and Technology (AIST).

Its ZT value, which is an indicator of conversion efficiency, is as low as 0.1 because Fujitsu Laboratories did not use poisonous materials such as bismuth telluride (BiTe). Still, the element can output several tens of microwatts when the temperature difference is several degrees and can power a watch, etc, the company said.