[SID] Samsung Reveals Structure of Its See-through OLED Panel

May 27, 2010
Shinya Saeki, Nikkei Electronics
The see-through OLED panel (front view)
The see-through OLED panel (front view)
[Click to enlarge image]
The see-through OLED panel (rear view)
The see-through OLED panel (rear view)
[Click to enlarge image]

Samsung Mobile Display Co Ltd announced the details of a technology used for its see-through OLED panel that has a transmittance of 38% or more at a symposium of SID 2010.

The OLED panel was exhibited at the 2010 International CES, which took place in January 2010, and has a screen size of 14 inches, a resolution of 960 x 540 pixels and a brightness of 200cd/m2.

The OLED panel uses a low-temperature polycrystalline silicon TFT for its drive element. Its device structure is a top emission type, in which light is extracted from the substrate placed in the opposite side of the TFTs. By forming drive elements and organic EL elements (anode electrode, luminescent layer) on gate or source wiring, about 75% of each pixel became a "see-through" area.

The organic EL elements are made by using a metal stencil mask, but common cathode electrodes are formed also in the see-through area. Therefore, Samsung Mobile Display newly developed a metal material for a cathode electrode that has a high transmittance.

According to Samsung Mobile Display, when drive elements or organic EL elements are formed on source wiring, see-through images considerably blur. This time, the company formed those elements on gate wiring.