Tottori University and Oike & Co Ltd made a transparent, flexible resistance random access memory (ReRAM) element using a plastic (PEN) substrate and confirmed its basic operation.
The ReRAM element is 100μm in diameter. And a GaZnO film formed in a room temperature is used for the resistance layer and the upper and lower electrode layers. The element has a transmittance of 66% against visible light.
The university and the company announced the achievement at a meeting of the Japan Society of Applied Physics, which is taking place from March 17 to 20, 2010, at Tokai University.
The rewriting voltage of the ReRAM element is 2V or less. When voltage is applied, it shows a bipolar switching behavior. The resistance ratio between the high-resistance state and the low-resistance state is 21. In theory, it is possible to make the ReRAM element multivalued because the resistance value in the high-resistance state can be changed in stages by improving the method of applying pulse voltage, according to the university.
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