Shin-Etsu Introduces Dry Film Dielectric Photoresist for Wafer Bonding, TSV Applications

Jul 31, 2009 16:23 Nikkei Electronics Asia

Shin-Etsu MicroSi has introduced an extension to its photosensitive dry film dielectric technology for 3D Through-Silicon Vias (TSV) and two-dimensional wafer bonding applications. Other non-3D applications for the photoresist include stress buffer and RDL dielectrics for wafer-level packaging.

The SINR negative photoresist film is available now in thicknesses from 12µm to 100µm. These siloxane-based dry films feature low residual stress, low temperature cure, good adhesion, and low dielectric constant.

For TSV applications, these films can be applied with a roll laminator or by vacuum lamination, which is preferred for TSV because the combination of temperature, pressure and vacuum allows the material to flow into the vias, producing a void-free dielectric fill and a planarized surface. CMOS image sensors are the first process that now uses this TSV technology. TSVs can typically feature vias that are 50µm to 100µm across. The SINR also works well for bonding applications, including wafer-to-wafer, chip-to-wafer, and wafer-to-glass, as in CMOS image sensors.

The SINR 3170 series and SINR 3570 series are now in production and available for sampling and evaluation.

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