Toshiba to Slash Production of NAND Flash Memory in Yokkaichi

Dec 17, 2008
Nikkei Electronics Asia

Toshiba Corp has announced an adjustment to production of NAND Flash memory at its Yokkaichi Operations plant in Mie Prefecture, Japan. The adjustment will cut production by approximately 30%, effective from January 2009.

Due to recession in the global economy and the slowdown in consumer spending, the demand for NAND Flash memories has shrunk. In order to reduce excess supply of NAND Flash memories, the company has decided to reduce output at Yokkaichi.

Yokkaichi Operations has four fabs. Fab 3 and Fab 4 produce NAND Flash memories on 300mm wafers, Fab 1 and Fab 2 on 200mm wafers. Prior to the January production adjustment, the 300mm wafer lines will suspend operation for 13 days, and the 200mm wafer lines for four days, during the year-end and new-year period. The company said it will continue to monitor the NAND market and will review operation plan in Yokkaichi as needed.

The company also noted that system LSI and discrete are also facing weak demand for digital consumer products. Therefore, it has also reviewed operating dates for its other semiconductor plants during the year-end and new-year period.

The 300mm wafer lines in the Oita Operations in Oita prefecture will close for 2 days for maintenance, and other lines will stop production for 22 days from December 24 to January 14.

The production plant focusing on producing opto semiconductors, the Kitakyushu Operations in Fukuoka prefecture, will stop for 25 days from December 25 to January 18. The Himeji Operations-Semiconductor in Hyogo prefecture, which focuses on producing power ICs and small signal ICs, will stop running for 18 days from December 20 to January 6.