Sony Corp announced Aug 21, 2008, that it developed a high-power red semiconductor laser diode for use as a light source in projectors.
The highly-luminescent laser diode uses a 635nm wavelength. With efforts such as the formation of a crystal that generates less heat, Sony succeeded in achieving an optical power of 7.2W, which the company claims is "the highest in the world."
The product is a 10mm-long array-structured semiconductor chip composed of 25 emitters. It is mounted on a copper heatsink. Sony improved the uniformity of the film that serves as the active layer. The company also increased the purity of aluminum indium phosphide (AlInP), which is used to form the cladding layer.
In addition, the company reduced the current density at the initial phase of laser oscillation by accurately controlling the concentration of magnesium (Mg) doping, which is performed to obtain the p-type conduction. With the adoption of a new bonding technique to attach the laser array and the heatsink, the company improved the heat dissipation efficiency from the device to the heatsink.
The operation current of the new diode is 14A and the operation voltage is 2.2V. It has an energy conversion efficiency of 23%. The vertical and horizontal divergence angles are 42° and 10°. The operating temperature is 25°C.
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