[CEATEC] Matsushita to Release Recorders with 45nm-process UniPhier LSI

The surface area of the substrate and the number of parts were reduced by 27% and 36%, respectively, by adopting a 45nm-process UniPhier.

The surface area of the substrate and the number of parts were reduced by 27% and 36%, respectively, by adopting a 45nm-process UniPhier.