[CEATEC Preview] Toshiba Develops CSCM With Si Through-hole Electrode Technology

Oct 2, 2007
Motoyuki Ooishi, Nikkei Electronics

Toshiba Corp. will exhibit a CSCM (Chip Scale Camera Module) developed with the Si through-hole electrode technology at CEATEC Japan 2007.

To use for mobile-phones, the company will begin commercial production of the module in January 2008. The module will be mounted with the company's CMOS sensor "Dynastron."

The Si through-hole electrode technology is used to form through-hole electrodes by making holes on Si wafers. This time, the technology is applied to make it possible to embed and assemble the parts of camera modules as wafers.

Also, the interposer was spared and the wire bonding space was reduced by forming a solder ball on the back of a wafer. As a result, the new CSCM is about 64% smaller in volume than the company's former module that has the same VGA chip.

Furthermore, adopting a heat-resistant lens and forming a solder ball enabled "solder reflow mounting," which shortens the mounting processes of camera modules in device manufacturers and, thus, contributes to streamlining of the manufacturing processes of surface mount base plates.

Iwate Toshiba Electronics Co. Ltd., Toshiba's subsidiary, will start producing CMOS camera modules that Toshiba has been outsourcing. That means Toshiba Group will have an integrated system of the production, from chips in Oita plant to camera modules in Iwate Toshiba Electronics.

Toshiba will gradually enhance its cost competitiveness by increasing the ratio of self-manufactured parts. The company will also self-manufacture the CSCM with the Si through-hole electrode.