Fujitsu Laboratories Ltd has announced the development of high power gallium nitride (GaN) high electron-mobility transistors (HEMT). These transistors can operate at a high temperature of 200°C for more than one million hours -- equivalent to over 100 years -- under pinch-off condition with a drain voltage of 50V.
Tests have been carried out and results have shown that GaN HEMTs can withstand harsh usage conditions, including high temperatures and high drain voltages. It also maintains high reliability throughout its long lifespan.
Fujitsu will aim at applying GaN HEMTs using this new technology in the high-speed wireless communications market, such as for satellite communication (VSAT), cellular basestations, WiMAX basestations, and other high-speed wireless communications infrastructure.
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