Fujitsu Announces Volume Production of 2-Mbit FRAM IC

Jun 22, 2007 10:19 Nikkei Electronics Asia

Fujitsu Microelectronics Asia Pte Ltd has announced the availability of two FRAM ICs, the MB85R2001 and MB85R2002, which feature non-volatile memory with high-speed data writing, low power consumption, and the ability to provide a high number of write cycles.

The FRAM's high-speed data writing and the high number of available write cycles allow its application in office equipment to store event counts or parameters, and log every event. FRAMs allow 10 billion read/write cycles, which corresponds to writing 30 times a second continuously for 10 years. FRAMs also can store data for more than 10 years without a battery. In applications such as instrumentation, the Fujitsu FRAM write mechanism ensures that data can be written to FRAM at high speed even if the power is interrupted even temporarily, so valuable data will not be lost.

The configuration of MB85R2001 is 256K words x 8 bits; the configuration of MB85R2002 is 128K words x 16 bits. Both feature read access times of 100 nanoseconds (ns), and read/write cycle times of 150ns. They operate from 3V to 3.6V.

Compared to battery-backed SRAM, the elimination of battery from FRAM simplifies production processes and removes the hassles of battery replacement and maintenance in products using the Fujitsu FRAM.

The 2-Mbit FRAM products have the same electrical characteristics and TSOP-48 package as Fujitsu¡Çs 1-Mbit FRAM products (MB85R1001, MB85R1002) that are currently in production. With the additional connection of only one address, a shift to the 2-Mbit products has been made possible. Therefore, on the same printed circuit board and depending on the necessary memory capacity, either the 1-Mbit or 2-Mbit FRAM can be used. The FRAMs are available in 48-pin TSOPs now.

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