Toshiba has announced a new fabrication process that uses a low-cost CMOS process to achieve high-speed, highly-integrated wireless communications over short distances -- the 60GHz CMOS receiver chip for the millimeter-wave band.
This integrates an on-chip antenna, LNA, a mixer with a preamplifier and a phase-locked loop (PLL) synthesizer in a die that measures 1.1 x 2.4mm without pad area.
Application of 90nm process technology, the process for millimeter waveband CMOS, supports high levels of integration and achieves a performance close to that of much more complex and expensive GaAs devices. A fully differential circuitry improves signal quality, as it achieves noise-resistant features suited to millimeter-wave IC application. Optimization of element structure and wiring structure restrain internal noise, and contributes to realizing stable operation -- the major issue to overcome for millimeter-wave CMOS IC.