Toshiba America Electronic Components Inc (TAEC) and its parent company, Toshiba Corp, have announced the companies' first commercially available gallium nitride (GaN) semiconductor high electron mobility transistor (HEMT). The GaN HEMT is an X-band device targeted at radar and medical applications.
The TGI8596-50 is an internally matched GaN HEMT power amplifier that operates in the 8.5GHz to 9.6GHz range with output power of 50W. The device features a three-dB compression point of 47.5dBm, linear gain of 9.0dB, and drain current of 4.5A. Targeted applications for this device include radar systems and medical applications, such as for use in oncology.
"GaN HEMT amplifiers have the potential to achieve significantly higher gain and output power than GaAs FETs at comparable frequency and input power," said Homayoun Ghani, business development manager, Microwave, Logic & Small Signal Devices, in TAEC's Discrete Business Unit.
Samples of the 50W, X-band TGI8596-50 GaN HEMT are available now.
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