Nikkei Electronics Asia --September 2010
Green Devices [SideBox]
Japanese SiC Business: Finally, Diode Volume Production

Aug 31, 2010 23:52 Tadashi Nezu

Continued from GaN Power Devices Go Commercial: DC-DC Converter MCMs Shipping

SiC devices, positioned as a promising next-generation power device technology, are booming in Japan. A collaborative effort by industry, government and academia is gearing up now to ensure that Japan takes and holds the lead in the sector.

Rohm Co., Ltd. of Japan is especially active among Japanese corporations, and was the first Japanese company to begin volume production of SiC power devices. It began shipment of volume-produced Schottky barrier diodes (SBD; 600V withstand voltage, 10A output current) in late April 2010. American and European firms including Infineon Technologies AG of Germany, Italian-French joint venture STMicroelectronics and Cree, Inc. of the US have been manufacturing SiC power devices for some time.

Other Japanese companies are also considering volume production of SiC SBDs, including New Japan Radio Co., Ltd. of Japan in October 2010, and Mitsubishi Electric Corp. of Japan in 2011, while R&D into commercial SiC power devices has been fast-tracked at Toshiba Corp. of Japan, Fuji Electric Device Technology Co., Ltd. of Japan and others.

Nippon Steel Corp. of Japan began sample-shipping 4-inch SiC wafers, essential in manufacturing SiC power devices, in April 2009. Rohm acquired Si wafer manufacturer SiCrystal of Germany in summer 2009, ensuring a stable supply for itself.

In addition to efforts by private enterprise, the Ministry of Economy, Trade and Industry has announced several policies to support the SiC business, such as launching the "New Material Power Semiconductor Device Project Toward Achieving a Low-Carbon Society" from fiscal 2010. The 5-year project has a first-year budget of two billion yen. The SiC Alliance has also been established to coordinate the efforts of Japanese companies and universities working in SiC technology.

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